Wet chemical and plasma etching of Ga2O3(Gd2O3)

Journal of the Electrochemical Society

Volumn 144, Issue 9, 1997, Pages

  Ren, F ^a   Hong, M ^a   Mannaerts, J P ^a   Lothian, J R ^a   Cho, A Y ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHLORINE COMPOUNDS; DEPOSITION; DIELECTRIC MATERIALS; ETCHING; FABRICATION; OXIDES; PLASMA ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SOLUTIONS; SURFACE STRUCTURE; THERMAL EFFECTS;

GADOLINIUM OXIDE; GALLIUM OXIDE; HYDROCHLORIDE; WET CHEMICAL ETCHING;

MOSFET DEVICES;

EID: 0031233571     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837929     Document Type: Article

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