Morphological, structural and optical properties of GaN grown on porous silicon/Si(100) substrate

Materials Letters

Volumn 62, Issue 3, 2008, Pages 515-519

  Matoussi, A ^a   Ben Nasr, F ^b   Salh, R ^c   Boufaden, T ^d   Guermazi, S ^b   Fitting, H J ^c   Eljani, B ^d   Fakhfakh, Z ^a  

^a University of Sfax   (Tunisia)

^b University of Sfax   (Tunisia)

^c UNIVERSITY OF ROSTOCK   (Germany)

^d FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

Cathodoluminescence; GaN; MOVPE; Photoluminescence

Indexed keywords

CATHODOLUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SURFACE MORPHOLOGY; X RAY DIFFRACTION;

EXCITONS BANDS; LAYERS GROWN;

GALLIUM NITRIDE;

EID: 36549023578     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2007.05.079     Document Type: Article

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