Cathodoluminescence depth profiling of ion-implanted GaN

Applied Physics Letters

Volumn 78, Issue 1, 2001, Pages 34-36

  Kucheyev, S O ^a   Toth, M ^b,d   Phillips, M R ^b   Williams, J S ^a   Jagadish, C ^a   Li, G ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

^c Ledex Corporation   (Taiwan)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002930590     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1337646     Document Type: Article

References (18)

1. See, for example, recent reviews: S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86. 1 (1999); S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, ibid. 87, 965 (2000). and references therein.
2. See, for example, recent reviews: S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86. 1 (1999); S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, ibid. 87, 965 (2000). and references therein.
3. J. I. Pankove and J. A. Hutchby, J. Appl. Phys. 47, 5387 (1976).
4. E. Silkowski, Y. K. Yeo, R. L. Hengehold, M. A. Khan, T. Lei, K. Evans, and C. Cerny, Mater. Res. Soc. Symp. Proc. 395, 813 (1996).
5. B. J. Pong, C. J. Pan, Y. C. Teng, G. C. Chi, W.-H. Li, K. C. Lee, and C.-H. Lee, J. Appl. Phys. 83, 5992 (1998).
6. A. Suvkhanov, J. Hunn, W. Wu, D. Thomson, K. Price, N. Parikh, E. Irene, R. F. Davis, and L. Krasnobaev, Mater. Res. Soc. Symp. Proc. 512, 475 (1998).
7. C. Ronning, E. P. Carlson, D. B. Thomson, and R. F. Davis, Appl. Phys. Lett. 73, 1622 (1998).
8. S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, M. Toth, M. R. Phillips, H. H. Tan, G. Li, and S. J. Pearton, Mater. Res. Soc. Symp. Proc. 622, T7.9.1 (2000).
9. K. Fleischer, M. Toth, M. R. Phillips, J. Zou, G. Li, and S. J. Chua, Appl. Phys. Lett. 74, 1114 (1999).
10. See, for example, a review by J. W. Orton and C. T. Foxon, Rep. Prog. Phys. 61, 1 (1998).
11. K. Kanaya and S. Okayama, J. Phys. D 5, 43 (1972).
12. However, in as-grown GaN, the measured intensity of near-gap emission decreases with increasing electron beam energy due to efficient self-absorption, and the YL intensity increases with beam energy due to a corresponding increase in the concentration of YL centers towards the GaN/sapphire interface (see, for example, Ref. 8) and/or due to the saturation of YL emission.
13. -2). Therefore, the effect of the quenching of CL emission coming from the implanted layer is even more pronounced in Fig. 1.
14. J. P. Biersack and L. G. Haggmark, Nucl. Instrum. Methods 174, 257 (1980).
15. After such an annealing of the sample from Fig. 2, the relative intensity of near-gap emission (measured with an electron beam energy of 20 keV) in the implanted part to that in the virgin part of the sample recovered from ∼ 4% in the as-implanted sample to ∼ 14% in the annealed one.
16. GaN bombarded under implant conditions of this study has a yellowish-brown appearance. The 1050°C annealing treatment significantly decreases the efficiency with which visible light is absorbed in the implanted layer, making implanted GaN appear as transparent as virgin GaN.
17. S.O. Kucheyev, M. Toth, M. R. Phillips, J. S. Williams, C. Jagadish, and G. Li (unpublished).
18. S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, and G. Li, Phys. Rev. B 62, 7510 (2000).