SCOPUS 정보 검색 플랫폼

Volumn 14, Issue 48, 2002, Pages 13329-13336

Optical and structural characterization of GaN/AlN quantum dots grown on Si(111)

(12) Salviati, G a Martinez, O a,b Mazzoni, M a Rossi, F a Armani, N a Gucciardi, P a Vinattieri, A c Alderighi, D c Colocci, M c Gonzalez, M A b Sanz Santacruz, L F b Massies, J d

a CNR (Italy)

b UNIVERSITY OF VALLADOLID (Spain)

c INFM (Italy)

d CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CATHODOLUMINESCENCE; CRYSTAL STRUCTURE; ELECTRON BEAMS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMISSION; NEAR FIELD SCANNING OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

ELECTRON BEAM INJECTION; MICRO RAMAN TECHNIQUES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037122082 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/14/48/385 Document Type: Article

Times cited : (7)

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