Luminescence study of (112̄0) GaN film grown by metalorganic chemical-vapor deposition

Journal of Applied Physics

Volumn 93, Issue 1, 2003, Pages 316-319

  Chen, Zhen ^a   Lu, Da Cheng ^a   Liu, Xianglin ^a   Wang, Xiaohui ^a   Han, Peide ^a   Wang, Du ^a   Yuan, Hairong ^a   Wang, ZhanGuo ^a   Li, GuoHua ^a   Fang, ZaiLi ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR LASERS;

BAND-GAP ENERGY;

SEMICONDUCTING FILMS;

EID: 0037248698     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1529296     Document Type: Article

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