Cathodoluminescence and micro-raman characterisation of GaN/AlN QDs grown on Si (111)

Physica Status Solidi (A) Applied Research

Volumn 195, Issue 1 SPEC, 2003, Pages 26-31

  Martinez, O ^a,b   Mazzoni, M ^a   Rossi, F ^a   Armani, N ^a   Salviati, G ^a   Lottici, P P ^c   Bersani, D ^c  

^a IMEM CNR   (Italy)

^b UNIVERSITY OF VALLADOLID   (Spain)

^c UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CATHODOLUMINESCENCE; ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; HETEROJUNCTIONS; SILICON; STRAIN;

MICRO-RAMAN TECHNIQUES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037277952     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306288     Document Type: Conference Paper

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