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Physica Status Solidi (A) Applied Research

Volumn 177, Issue 2, 2000, Pages 485-493

Hexagonal GaN epitaxial growth on Si(111) by a vacuum reaction method

(3) Zhang, Haoxiang a Ye, Zhizhen a Zhao, Binghui a

a ZHEJIANG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; FILM GROWTH; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON WAFERS; SINGLE CRYSTALS;

BUFFER LAYERS; GALLIUM NITRIDE; MICROCRYSTALLINE MATERIALS; VACUUM REACTION METHOD;

SEMICONDUCTING FILMS;

EID: 0342756827 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/(SICI)1521-396X(200002)177:2<485::AID-PSSA485>3.0.CO;2-7 Document Type: Article

Times cited : (4)

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