Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: Role of GaN buffer layer

Applied Surface Science

Volumn 177, Issue 1-2, 2001, Pages 22-31

  Godlewski, M ^a   Goldys, E M ^b   Phillips, M R ^c   Pakula, K ^d   Baranowski, J M ^d  

^a INSTITUTE OF PHYSICS   (Poland)

^b MACQUARIE UNIVERSITY   (Australia)

^c UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

^d UNIVERSITY OF WARSAW   (Poland)

Author keywords

Cathodoluminescence; Diffusion; Gallium nitride; Interface states; Scanning electron microscopy

Indexed keywords

CATHODOLUMINESCENCE; FILM GROWTH; FILM PREPARATION; INTERDIFFUSION (SOLIDS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

DEPTH-PROFILING CATHODOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035370883     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00188-X     Document Type: Article

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