Porous silicon as an intermediate buffer layer for GaN growth on (100) Si

Microelectronics Journal

Volumn 32, Issue 12, 2001, Pages 995-998

  Matoussi, A ^a   Boufaden, T ^b   Missaoui, A ^c   Guermazi, S ^a   Bessais B ^c   Mlik, Y ^a   El Jani, B ^b  

^a University of Sfax   (Tunisia)

^b FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^c Institut National de Recherche Scientifique et Technique Tunis   (Tunisia)

Author keywords

III V nitrides; Metalorganic vapor phase epitaxy; Porous silicon

Indexed keywords

LASER BEAMS; MORPHOLOGY; POROSITY; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS;

SEMICONDUCTING SILICON;

EID: 0035545746     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(01)00061-1     Document Type: Article

References (14)