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MRS Internet Journal of Nitride Semiconductor Research

Volumn 3, Issue , 1998, Pages

Effect of internal absorption on cathodoluminescence from GaN

(5) Knobloch, Klaus a Perlin, Piotr a Krueger, Joachim a Weber, Eicke R a Kisielowski, Christian b

a UNIVERSITY OF CALIFORNIA (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CATHODOLUMINESCENCE; ENERGY DISSIPATION; EXCITONS; FILM GROWTH; LASERS; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; RELAXATION PROCESSES; SAPPHIRE;

BAND-EDGE; BEAM ENERGY; EXCITATION SPECTRA; LASER EXCITATIONS;

GALLIUM NITRIDE;

EID: 4043109071 PISSN: 10925783 EISSN: None Source Type: Journal
DOI: 10.1557/S1092578300000764 Document Type: Article

Times cited : (43)

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