MOCVD growth of cubic gallium nitride: Effect of V/III ratio

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 493-496

  Moret, M ^a   Ruffenach Clur, S ^a   Moreaud, N ^a   Briot, O ^a   Calas, J ^a   Aulombard, R L ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CRYSTAL GROWTH; DECOMPOSITION; LOW TEMPERATURE OPERATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

CRYSTALLINE QUALITY; GALLIUM NITRIDES; TRIETHYL GALLIUM;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033221239     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<493::AID-PSSA493>3.0.CO;2-6     Document Type: Article

References (6)

1. F. DESSENNE, D. CICHOCKA, P. DESPLANQUES, and R. FAUQUEMBERGUE, Mater. Sci. Eng. B 50, 315 (1997).
2. H. YANG, L.X. ZHENG, J.B. LI, X.J. WANG, D.P. XU, Y.T. WANG, X.W. HU, and P.D. HAN, Appl. Phys. Lett. 74, 2498 (1999).
3. A. NAKAIDAIRA and H. TANAKA, J. Electron. Mater. 26, 320 (1997).
4. J. WU, H. YAGUCHI, H. NAGASAWA, Y. YAMAGUCHI, K. ONABE, Y. SHIRAKI, and R. ITO, Jpn. J. Appl. Phys., Part 1, 36, 4241 (1997).
5. M. SATO, J. Appl. Phys. 78, 2123 (1995).
6. H. TACHIBANA, T. ISHIDO, M. OGAWA, M. FUNATO, S. FUJITA, and S. FUJITA, J. Cryst. Growth 196, 41 (1999).