Poly- and single-crystalline h-GaN grown on SiCN/Si(100) and SiCN/Si(111) substrates by MOCVD

Journal of Electronic Materials

Volumn 35, Issue 10, 2006, Pages 1837-1841

  Chang, Shiuan Ho ^a   Fang, Yean Kuen ^a   Ting, Shyh Fann ^a   Lin, Chun Yue ^a   Chen, Shih Fang ^a   Kuan, Hon ^b   Liang, Chin Yung ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FAR EAST UNIVERSITY   (Taiwan)

Author keywords

c GaN; h GaN; Metalorganic chemical vapor deposition (MOCVD); SiCN

Indexed keywords

CRYSTAL GROWTH; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; X RAY DIFFRACTION;

C-GAN; H-GAN; SICN;

GALLIUM NITRIDE;

EID: 33750164560     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0165-2     Document Type: Article

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