SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 9 A, 2005, Pages 6490-6494

DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AIN/sapphire templates

(8) Miyoshi, Makoto a,b Imanishi, Atsushi c Egawa, Takashi a Ishikawa, Hiroyasu a Asai, Kei Ichiro b Shibata, Tomohiko b Tanaka, Mitsuhiro b Oda, Osamu b

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

b NGK INSULATORS LTD (Japan)

c DENSO CORPORATION (Japan)

Author keywords

AIGaN AIN GaN; AIN sapphire template; HEMT; Recessed ohmic

Indexed keywords

ALUMINUM NITRIDE; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDE; SAPPHIRE; TRANSCONDUCTANCE;

ALGAN/ALN/GAN; ALN/SAPPHIRE TEMPLATE; RECESSED OHMIC;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 26244443807 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.6490 Document Type: Article

Times cited : (33)

References (16)

1
- 0842288132
- K. Joshin, T. Kikkawa, H. Hayashi, T. Maniwa, S. Yokokawa, M. Yokoyama, N. Adachi and M. Takikawa: Tech. Dig. IEDM, 2003, p. 983.
- (2003) Tech. Dig. IEDM , pp. 983
- Joshin, K.¹ Kikkawa, T.² Hayashi, H.³ Maniwa, T.⁴ Yokokawa, S.⁵ Yokoyama, M.⁶ Adachi, N.⁷ Takikawa, M.⁸

2
- 0348146335
- M. Kuzuhara, H. Miyamoto, Y. Ando, T. Inoue, Y. Okamoto and T. Nakayama: Phys. Status Solidi A 200 (2003) 161.
- (2003) Phys. Status Solidi A , vol.200 , pp. 161
- Kuzuhara, M.¹ Miyamoto, H.² Ando, Y.³ Inoue, T.⁴ Okamoto, Y.⁵ Nakayama, T.⁶

3
- 17644445773
- H. Ishida, Y. Hirose, T. Murata, A. Kanda, Y. Ikeda, T. Matsuno, K. Inoue, Y. Uemoto, T. Tanaka and D. Ueda: Tech. Dig. IEDM, 2003, p. 583.
- (2003) Tech. Dig. IEDM , pp. 583
- Ishida, H.¹ Hirose, Y.² Murata, T.³ Kanda, A.⁴ Ikeda, Y.⁵ Matsuno, T.⁶ Inoue, K.⁷ Uemoto, Y.⁸ Tanaka, T.⁹ Ueda, D.¹⁰

4
- 0842309763
- W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, I. Ohmura and T. Ogura: Tech. Dig. IEDM, 2003, p. 587.
- (2003) Tech. Dig. IEDM , pp. 587
- Saito, W.¹ Takada, Y.² Kuraguchi, M.³ Tsuda, K.⁴ Ohmura, I.⁵ Ogura, T.⁶

5
- 0035474079
- L. Shen, S. Heikman, B. Moran, R. Coffie, N.-Q. Zhang, D. Buttari, I. P. Smorchkova, S. Keller, S. P. DenBaars and U. K. Mishra: IEEE Electron Device Lett. 22 (2001) 457.
- (2001) IEEE Electron Device Lett. , vol.22 , pp. 457
- Shen, L.¹ Heikman, S.² Moran, B.³ Coffie, R.⁴ Zhang, N.-Q.⁵ Buttari, D.⁶ Smorchkova, I.P.⁷ Keller, S.⁸ DenBaars, S.P.⁹ Mishra, U.K.¹⁰

6
- 0035890369
- P. Smorchkova, L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, S. P. DenBaars, J. S. Speck and U. K. Mishra: J. Appl. Phys. 90 (2001) 5196.
- (2001) J. Appl. Phys. , vol.90 , pp. 5196
- Smorchkova, P.¹ Chen, L.² Mates, T.³ Shen, L.⁴ Heikman, S.⁵ Moran, B.⁶ Keller, S.⁷ DenBaars, S.P.⁸ Speck, J.S.⁹ Mishra, U.K.¹⁰

7
- 0000620946
- L. Hsu and W. Walukiewicz: J. Appl. Phys. 89 (2001) 1783.
- (2001) J. Appl. Phys. , vol.89 , pp. 1783
- Hsu, L.¹ Walukiewicz, W.²

8
- 4944232118
- M. Miyoshi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri. T. Shibata, M. Tanaka and O. Oda: Appl. Phys. Lett. 85 (2004) 1710.
- (2004) Appl. Phys. Lett. , vol.85 , pp. 1710
- Miyoshi, M.¹ Ishikawa, H.² Egawa, T.³ Asai, K.⁴ Mouri, M.⁵ Shibata, T.⁶ Tanaka, M.⁷ Oda, O.⁸

9
- 0036723333
- M. Sakai, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno, T. Shibata, K. Asai, S. Sumiya, Y. Kuraoka, M. Tanaka and O. Oda: J. Cryst. Growth 244 (2002) 6.
- (2002) J. Cryst. Growth , vol.244 , pp. 6
- Sakai, M.¹ Ishikawa, H.² Egawa, T.³ Jimbo, T.⁴ Umeno, M.⁵ Shibata, T.⁶ Asai, K.⁷ Sumiya, S.⁸ Kuraoka, Y.⁹ Tanaka, M.¹⁰ Oda, O.¹¹

10
- 79956058781
- S. Arulkumaran, M. Sakai, T. Egawa, H. Ishikawa, T. Jirabo, T. Shibata, K. Asai, S. Sumiya, Y. Kuraoka, M. Tanaka and O. Oda: Appl. Phys. Lett. 81 (2002) 1131.
- (2002) Appl. Phys. Lett. , vol.81 , pp. 1131
- Arulkumaran, S.¹ Sakai, M.² Egawa, T.³ Ishikawa, H.⁴ Jirabo, T.⁵ Shibata, T.⁶ Asai, K.⁷ Sumiya, S.⁸ Kuraoka, Y.⁹ Tanaka, M.¹⁰ Oda, O.¹¹

11
- 79956017775
- D. Qiao, L. S. Yu, L. Jia, P. M. Asbeck, S. S. Lau and T. E. Haynes: Appl. Phys. Lett. 80 (2002) 992.
- (2002) Appl. Phys. Lett. , vol.80 , pp. 992
- Qiao, D.¹ Yu, L.S.² Jia, L.³ Asbeck, P.M.⁴ Lau, S.S.⁵ Haynes, T.E.⁶

12
- 0036477117
- D. Buttari, A. Chini, E. Meneghesso, E. Zanoni, B. Moran, S. Heikman, N. Q. Zhang, L. Shen, R. Coffie, S. P. DenBaars and U. K. Mishra: IEEE Electron Device Lett. 23 (2002) 76.
- (2002) IEEE Electron Device Lett. , vol.23 , pp. 76
- Buttari, D.¹ Chini, A.² Meneghesso, E.³ Zanoni, E.⁴ Moran, B.⁵ Heikman, S.⁶ Zhang, N.Q.⁷ Shen, L.⁸ Coffie, R.⁹ DenBaars, S.P.¹⁰ Mishra, U.K.¹¹

13
- 0348146361
- H. Okita, K. Kaifu, J. Mita, T. Yamada, Y. Sano, H. Tshikawa, T. Egawa and T. Jimbo: Phys. Status Solidi A 200 (2003) 187.
- (2003) Phys. Status Solidi A , vol.200 , pp. 187
- Okita, H.¹ Kaifu, K.² Mita, J.³ Yamada, T.⁴ Sano, Y.⁵ Tshikawa, H.⁶ Egawa, T.⁷ Jimbo, T.⁸

14
- 31544461174
- T. Murata, A. Kanda, M. Hikita, Y. Hirose. Y. Uemoto, T. Tanaka, K. Inoue and D. Ueda: Ext. Abstr. 2004 Int. Conf. Solid State Devices and Materials (SSDM 2004), p. 260.
- Ext. Abstr. 2004 Int. Conf. Solid State Devices and Materials (SSDM 2004) , pp. 260
- Murata, T.¹ Kanda, A.² Hikita, M.³ Hirose, Y.⁴ Uemoto, Y.⁵ Tanaka, T.⁶ Inoue, K.⁷ Ueda, D.⁸

15
- 84875084894
- T. Shibata, K. Asai, S. Sumiya, M. Mouri, M. Tanaka, O. Oda, H. Katsukawa, H. Miyake and K. Hiramatsu: Phys. Status Solidi C 0 (2003) 2023.
- (2003) Phys. Status Solidi C , pp. 2023
- Shibata, T.¹ Asai, K.² Sumiya, S.³ Mouri, M.⁴ Tanaka, M.⁵ Oda, O.⁶ Katsukawa, H.⁷ Miyake, H.⁸ Hiramatsu, K.⁹

16
- 13644278150
- M. Miyoshi, M. Sakai, S. Arulkumaran, H. Ishikawa, T. Egawa, M. Tanaka and O. Oda: Jpn. J. Appl. Phys. 43 (2004) 7939.
- (2004) Jpn. J. Appl. Phys. , vol.43 , pp. 7939
- Miyoshi, M.¹ Sakai, M.² Arulkumaran, S.³ Ishikawa, H.⁴ Egawa, T.⁵ Tanaka, M.⁶ Oda, O.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.