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Volumn 273-274, Issue , 1999, Pages 148-151
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Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0 0 0 1) sapphire
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Author keywords
[No Author keywords available]
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Indexed keywords
CATHODOLUMINESCENCE;
DISLOCATIONS (CRYSTALS);
ELECTRON BEAMS;
ELECTRON IRRADIATION;
EMISSION SPECTROSCOPY;
EPITAXIAL GROWTH;
FILM GROWTH;
SAPPHIRE;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
ULTRAVIOLET RADIATION;
GALLIUM NITRIDE;
SEMICONDUCTING FILMS;
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EID: 0033328709
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-4526(99)00434-2 Document Type: Article |
Times cited : (16)
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References (9)
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