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Volumn 273-274, Issue , 1999, Pages 148-151

Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0 0 0 1) sapphire

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; ELECTRON IRRADIATION; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; FILM GROWTH; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; ULTRAVIOLET RADIATION;

EID: 0033328709     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00434-2     Document Type: Article
Times cited : (16)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.