SCOPUS 정보 검색 플랫폼

Volumn , Issue 7, 2003, Pages 2331-2334

AlGaN/GaN microwave HFET including a thin AlN carrier exclusion layer

Author keywords

[No Author keywords available]

Indexed keywords

2-D ELECTRON GAS; ALGAN; ALGAN/GAN; ALN; DRIFT MOBILITIES; FIELD EFFECT TRANSISTOR STRUCTURES; GAN BUFFER LAYERS;

CARRIER MOBILITY; ELECTRON GAS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; SAPPHIRE; SILICON CARBIDE;

ALUMINUM NITRIDE;

EID: 84875117512 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200303310 Document Type: Conference Paper

Times cited : (25)

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