Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2424-2428

  Bougrioua, Z ^a   Azize, M ^a,b   Jimenez, A ^c   Brana A F ^d   Lorenzini, P ^a   Beaumont, B ^b   Munoz E ^d   Gibart, P ^b  

^a CRHEA CNRS   (France)

^b LUMILOG   (France)

^c UNIVERSITY OF ALCALÁ   (Spain)

^d UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; IRON; METALLORGANIC VAPOR PHASE EPITAXY; MODULATION;

DISLOCATION DENSITY; FE MODULATION DOPING;

SEMICONDUCTOR DOPING;

EID: 27344436079     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461588     Document Type: Conference Paper

References (9)

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