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Volumn 289, Issue 1, 2006, Pages 6-13

Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates

(12) Engl, K a,b Beer, M a Gmeinwieser, N a Schwarz, U T a Zweck, J a Wegscheider, W a Miller, S b Miler, A b Lugauer, H J b Bruderl G b Lell, A b Harle V b

a UNIVERSITY OF REGENSBURG (Germany)

b OSRAM OPTO SEMICONDUCTORS GMBH (Germany)

Author keywords

A l. Dislocation; A1. Characterization; A1. Defects; A1. Etching; B l. GaN

Indexed keywords

ALUMINUM NITRIDE; EPITAXIAL GROWTH; GALLIUM NITRIDE; PHOTOLUMINESCENCE; SILICON NITRIDE; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

DISLOCATION; EPITAXIAL FILMS; GAN; SIC SUBSTRATES;

SILICON CARBIDE;

EID: 33244497350 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.10.115 Document Type: Article

Times cited : (24)

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