Marker layers for the development of a multistep GaN FACELO process

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 515-519

  Habel, Frank ^a   Brückner, Peter ^a   Scholz, Ferdinand ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

A3. Epitaxial lateral overgrowth; A3. FACELO; A3. Metalorganic vapor phase epitaxy; B2. Gan

Indexed keywords

CARRIER MOBILITY; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; LIGHT EMITTING DIODES; LITHOGRAPHY; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

EPITAXIAL LATERAL OVERGROWTH; FACELO; GAN; PARASITIC INFLUENCES;

GALLIUM NITRIDE;

EID: 9944245392     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.082     Document Type: Conference Paper

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