Reduction of dislocations in GaN epilayers grown on Si(111) substrate using SixNy inserting layer

Applied Physics Letters

Volumn 85, Issue 9, 2004, Pages 1502-1504

  Lee, Kang Jea ^a   Shin, Eun Ho ^a   Lim, Kee Young ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CRACK PROPAGATION; CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); LATTICE CONSTANTS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SILICON NITRIDE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CRYSTAL QUALITY; EPILAYERS; INSERTING LAYERS; THERMAL EXPANSION COEFFICIENT;

GALLIUM NITRIDE;

EID: 4944243332     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1784046     Document Type: Article

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