Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer

Solid-State Electronics

Volumn 50, Issue 9-10, 2006, Pages 1515-1521

  Miyoshi, Makoto ^a,b   Egawa, Takashi ^a   Ishikawa, Hiroyasu ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b NGK INSULATORS LTD   (Japan)

Author keywords

AlGaN; AlN; GaN; HEMT; Mobility; MOVPE

Indexed keywords

ALUMINUM NITRIDE; CARRIER MOBILITY; ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; THIN FILMS;

ALGAN; HALL MOBILITY; HETEROINTERFACE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33750290286     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.07.016     Document Type: Article

References (15)

1. Joshin K, Kikkawa T, Hayashi H, Maniwa T, Yokokawa S, Yokoyama M et al. 2003 Tech. Digest in the IEEE international electron devices meeting (IEDM) 2003. p. 983-6.
2. Kuzuhra M., Miyamoto H., Ando Y., Inoue T., Okamoto Y., and Nakayama T. Phys Stat Sol (a) 200 (2003) 161-167
3. Ishida H, Hirose Y, Murata T, Kanda A, Ikeda Y, Matsuno T et al. 2003 Tech. Digest in the IEEE international electron devices meeting (IEDM) 2003. p. 583-6.
4. Saito W, Takada Y, Kuraguchi M, Tsuda K, Ohmura I, Ogura T. 2003 Tech. Digest in the IEEE international electron devices meeting (IEDM) 2003. p. 587-90.
5. Smorchkova I.P., Chen L., Mates T., Shen L., Heikman S., Moran B., et al. J Appl Phys 90 (2001) 5196-5201
6. Shen L., Heikman S., Moran B., Coffie R., Zhang N.-Q., Buttari D., et al. IEEE Trans Electron Dev 22 (2001) 457-459
7. Hsu L., and Walukiewicz W. J Appl Phys 89 (2001) 1783-1789
8. Miyoshi M., Ishikawa H., Egawa T., Asai K., Shibata T., Tanaka M., et al. Appl Phys Lett 85 (2004) 1710-1712
9. Kuzmik J. IEEE Electron Dev Lett 22 (2001) 510-512
10. Shur M., Gelmont B., and Khan M.A. J Electron Mater 25 (1996) 777-785
11. Hsu L., and Walukiewicz W. Phys Rev B 56 (1997) 1520-1528
12. Zanato D., Gokden S., Balkan N., Ridley B.K., and Schaff W.J. Semicond Sci Technol 19 (2004) 427-432
13. Vennéguès P., Bougrioua Z., Bethoux J.M., Azize M., and Tottereau O. J Appl Phys 97 (2005) 200 024912-1-6
14. Gherasimova M., Cui G., Ren Z., Su J., Wang X.L., Han J., et al. J Appl Phys 95 (2004) 2921-2923
15. Bougrioua Z., Moerman I., Nistor L., Van Daele B., Monroy E., Palacios E.T., et al. Phys Stat Sol (a) 195 (2003) 93-100