Ultrathin ZrO2 films on Si-rich SiC(0 0 0 1)-(3 × 3): Growth and thermal stability

Surface Science

Volumn 601, Issue 11, 2007, Pages 2390-2400

  Karlsson, P G ^a   Johansson, L I ^b   Richter, J H ^a   Virojanadara, C ^b   Blomquist, J ^c   Uvdal, P ^c   Sandell, A ^a  

^a UPPSALA UNIVERSITY   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

^c LUND UNIVERSITY   (Sweden)

Author keywords

Chemical vapor deposition; Semiconductor insulator interfaces; Silicon carbide; Synchrotron radiation photoelectron spectroscopy; X ray absorption spectroscopy; Zirconium dioxide

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; OXIDATION; PHOTOELECTRON SPECTROSCOPY; SILICON COMPOUNDS; THERMODYNAMIC STABILITY; X RAY SPECTROSCOPY; ZIRCONIUM; ZIRCONIUM COMPOUNDS;

SEMICONDUCTOR-INSULATOR INTERFACES; SYNCHROTRON RADIATION PHOTOELECTRON SPECTROSCOPY; X-RAY ABSORPTION SPECTROSCOPY; ZIRCONIUM DIOXIDE;

ULTRATHIN FILMS;

EID: 34249274946     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.04.026     Document Type: Article

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