Reassessment of core-level photoemission spectra of reconstructed SiC(0001) surfaces

Surface Science

Volumn 470, Issue 1-2, 2000, Pages

  Tautz, F S ^a   Sloboshanin, S ^a   Starke, U ^b   Schaefer, J A ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Chemisorption; Electron energy loss spectroscopy (EELS); Hydrogen atom; Silicon carbide; Single crystal surfaces; Surface relaxation and reconstruction; Surface structure, morphology, roughness, and topography; X ray photoelectron spectroscopy

Indexed keywords

ELECTRON ENERGY LOSS SPECTROSCOPY; HYDROGEN; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR VIBRATIONS; MORPHOLOGY; PHOTOEMISSION; RELAXATION PROCESSES; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE; SINGLE CRYSTALS; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

CORE-LEVEL PHOTOEMISSION SPECTRA; TWISTED-ADLAYER MODELS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0034504077     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00841-4     Document Type: Article

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