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3
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84926845313
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various articles in
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See various articles in Philos. Mag. 55 (1987).
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(1987)
Philos. Mag.
, vol.55
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4
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84926867024
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Proceedings of the 173rd meeting of the Electrochemical Society, Atlanta, Georigia, 1988, edited by C. R. Helms (unpublished).
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6
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84926801634
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F. Herman, I. P. Batra, and R. V. Kasowski, in The Physics of SiO2_ and its Interfaces, Ref. 1, p. 333;
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8
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84926801633
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S. T. Pantelides and Marshall Long, in The Physics of SiO2_ and its Interfaces, Ref. 1, p. 339.
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27
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84950591595
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edited by, J. M. Gibson, L. R. Dawson, MRS, Pittsburgh
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(1985)
Layered Structures, Epitaxy, and Interfaces
, pp. 199
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Grovenor, C.R.M.1
Cerezo, A.2
Smith, G.D.W.3
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28
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84926845312
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A. M. Stoneham, C. R. M. Grovenor, and A. Cerezo, in Ref. 3, p. 201.
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42
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84926801631
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T. Hattori and T. Suzuki, in Proceedings of Extended Abstracts of the 16th International Conference on Solid State Devices and Materials, Ref. 32, p. 497.
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62
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84926801629
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The other half-layer of inner dimer atoms has opposite charge transfer and can be located about 0.2 eV below the bulk line by least-squares fitting. STM pictures of Si(100) show both symmetric and asymmetric dimers (Ref. 50). In our assignment the symmetric dimers are in fact rapidly oscillating asymmetric dimers. The time scale of the photoemission process is faster than the oscillation frequency, whereas the time scale of the STM experiment is slower.
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65
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84926801628
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The surface core-level intensities (relative to the total intensity) obtained in this work [0.163 for Si(100) and 0.050 for Si(111) at h ν = 150 eV] are very similar to ours [0.17 for Si(100) and 0.05 for Si(111) at h ν = 130 eV]. However, a different assignment is given by Rich et al. which doubles the number of surface atoms corresponding to a given core-level intensity. Essentially, such an assignment is not compatible with the surface core-level intensities on other model surfaces [the As/Si(111)1 times 1 and CaF2_/Si(111)1 times 1 structures would give about two layers of Si with shifted core levels], and it is opposite to our knowledge about charge transfer at the Si(111)7 times 7 surface. Scanning tunneling spectroscopy (Ref. 50) and first-principles calculations (Ref. 51) find that electrons are transferred from adatoms to rest atoms to fill the dangling bond orbital of the rest atoms. Therefore, one would expect the rest atoms to exhibit the observed upwards core-level shift, and not the adatoms as in the assignment by Rich et al.. Since there are about twice as many adatoms in the unit cell as rest atoms (12 vs 7) there is a factor of 2 discrepancy between the assignments.
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71
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0006150804
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(1986)
Appl. Phys. Lett.
, vol.48
, pp. 596
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Himpsel, F.J.1
Hillebrecht, F.U.2
Hughes, G.3
Jordan, J.L.4
Karlsson, U.O.5
McFeely, F.R.6
Morar, J.F.7
Rieger, D.8
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82
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84926867023
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The surface to bulk+surface intensity ratio is 1.01 times greater for Si(111) terminated by a single dangling bond than for Si(100) at h ν = 130 eV, see Eqs. (4), (5a), and (5b), and Table I.
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92
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84926823407
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The Si(100) surface terminated by (111) facets can exhibit Si3+_ at the expense of creating a higher bond density at the Si surface. We can rule out such a model by observing that the distribution of intermediate-oxidation states for Si(100) differs from that for Si(111).
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96
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84926867021
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G. Hollinger, R. Saoudi, P. Ferret, M. Pitaval, in Proceedings of the 173rd meeting of the Electrochemical Society, Atlanta, Georgia, 1988 (unpublished).
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