Local study of thickness-dependent electronic properties of ultrathin silicon oxide near SiO2/Si interface

Journal of Physics D: Applied Physics

Volumn 40, Issue 9, 2007, Pages 2886-2893

  Xue, K ^a   Ho, H P ^a   Xu, J B ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; ENERGY GAP; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; THICKNESS MEASUREMENT; VALENCE BANDS;

BAND OFFSET; OXIDE GAP STATES; STERIC DIFFERENCE; TRANSITIONAL REGION;

ULTRATHIN FILMS;

EID: 34247475729     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/9/033     Document Type: Article

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