Layer-by-layer etching of Si(111) surface by oxygen at elevated temperature

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1582-1585

  Komeda, Tadahiro ^a   Nishioka, Yasushiro ^a  

^a Texas Instruments Japan Ltd   (Japan)

Author keywords

Elevated temperature; Oxidation; Scanning tunneling microscopy (STM); Si(111) 7 7; Step motion; Surface etching

Indexed keywords

EID: 0011022877     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1582     Document Type: Article

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