Local dielectric breakdown in ultrathin SiO2 films: Characterization by Scanning Tunneling Microscopy

NEC Research and Development

Volumn 40, Issue 4, 1999, Pages 410-413

  Watanabe, Heiji ^a   Baba, Toshio ^a   Ichikawa, Masakazu ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; LEAKAGE CURRENTS; SCANNING TUNNELING MICROSCOPY; SILICA; SPECTROSCOPIC ANALYSIS;

DIELECTRIC BREAKDOWN; SCANNING TUNNELING SPECTROSCOPY (STS);

ULTRATHIN FILMS;

EID: 0033356718     PISSN: 0547051X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. R. Moazzami and C. Hu, "Stress-Induced Current in Thin Silicon Dioxide Films," Tech. Dig. Int. Electron Dev. Meet., pp. 139-142, 1992.
2. Ph. Avouris, et al., "Atomic-Resolved Surface Chemistry: The Early Steps of Si(111)-7×7 Oxidation," J. Vacuum Sci. & Technol., B9, pp. 424-30, 1991.
3. 2 by Ballistic Electron Emission Spectroscopy," J. Vacuum Sci. & Technol., B15, pp. 1080-1088, 1997.
4. H. Watanabe, et al., "Observation and Creation of Current Leakage Sites in Ultrathin Silicon Dioxide Films Using Scanning Tunneling Microscopy,"Appl. Phys. Lett., 72, pp. 1987-1989, 1998.
5. 2 Films Using Scanning Tunneling Microscopy and Spectroscopy," J. Appl. Phys., 85, pp. 6704-6710, 1999.
6. 2 Structures," J. Appl. Phys., 83, pp. 3638-3642, 1998.