Coherent electronic fringe structure in incommensurate silver-silicon quantum wells

Science

Volumn 314, Issue 5800, 2006, Pages 804-806

  Speer, H J ^a   Tang, S J ^a   Miller, T ^a   Chiang, T C ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; FILM GROWTH; PHOTOEMISSION; SEMICONDUCTOR DOPING; SILVER ALLOYS;

ELECTRON CONFINEMENT; INTERFACE STRUCTURES; QUANTUM SLOPES; VALENCE BANDS;

SEMICONDUCTOR QUANTUM WELLS;

SILICON; SILVER;

ELECTRON; SILICON; SILVER;

ARTICLE; ELECTRONICS; ENERGY; FILM; PRIORITY JOURNAL; QUANTUM MECHANICS; WAVEFORM;

EID: 33750731574     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1132941     Document Type: Article

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19. Supported by the U.S. Department of Energy (grant DEFG02-91ER4S439). We acknowledge the Petroleum Research Fund, administered by the American Chemical Society, and the U.S. National Science Foundation (grant DMR-05-03323) for partial support of personnel and the beamline facilities at the Synchrotron Radiation Center, where the photoemission work was performed. The Synchrotron Radiation Center is supported by the U.S. National Science Foundation (grant DMR-05-37588).