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Volumn 107, Issue 13, 2003, Pages 2939-2943

XPS studies of SiO2/Si system under external bias

Author keywords

[No Author keywords available]

Indexed keywords

EXTERNAL BIAS; SQUARE WAVE BIAS; STRAY ELECTRONS;

EID: 0038056020     PISSN: 10895647     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp022003z     Document Type: Article
Times cited : (101)

References (39)
  • 22
    • 0000503140 scopus 로고    scopus 로고
    • Briggs, D., Seah, M. P., Eds.; Wiley: New York
    • Seah, M. P. In Practical Surface Analysis, 2nd ed.; Briggs, D., Seah, M. P., Eds.; Wiley: New York, 1999; Vol. 1, p 541.
    • (1999) Practical Surface Analysis, 2nd Ed. , vol.1 , pp. 541
    • Seah, M.P.1
  • 36
    • 0038763172 scopus 로고    scopus 로고
    • note
    • Resolution of our spectrometer is slightly better than 0.80 eV as measured in the Ag3d peaks, and we use standard curve fitting routines with 0.60 eV spin-orbit parameter for the Si2p. Because we extract the binding energy difference by fitting the entire silicon substrate and the oxide peaks, we estimate our error in measuring the binding energy differences to be better than 0.03 eV.
  • 37
    • 0038763175 scopus 로고    scopus 로고
    • note
    • This point was suggested by Dr. H. Cohen, as well as by one of the reviewers and will be the subject of our future investigations.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.