First-principles study of Si-Si O2 interface and the impact on mobility

Applied Physics Letters

Volumn 86, Issue 8, 2005, Pages 1-3

  Liu, X Y ^a   Jovanovic, D ^b   Stumpf, R ^c,d  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c MOTOROLA INC   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC MODEL; INTERFACE PROPERTIES; INTERFACE SCATTERING; QUANTUM TRANSPORT SIMULATIONS;

BOUNDARY CONDITIONS; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; ELECTRON MOBILITY; PROBABILITY DENSITY FUNCTION; QUANTUM THEORY; SILICA; SILICON;

INTERFACES (MATERIALS);

EID: 17044386231     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1867562     Document Type: Article

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