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Journal of Non-Crystalline Solids

Volumn 303, Issue 1, 2002, Pages 150-161

Electrical characterization of gate oxides by scanning probe microscopies

(1) Ludeke, R a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; HOLE TRAPS; INTERFACES (MATERIALS); SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON;

BALLISTIC ELECTRON EMISSION MICROSCOPY (BEEM);

GATES (TRANSISTOR);

EID: 0036567841 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(02)00978-X Document Type: Article

Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.