Observation and creation of current leakage sites in ultrathin silicon dioxide films using scanning tunneling microscopy

Applied Physics Letters

Volumn 72, Issue 16, 1998, Pages 1987-1989

  Watanabe, Heiji ^a   Fujita, Ken ^a   Ichikawa, Masakazu ^a  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; FILM GROWTH; LEAKAGE CURRENTS; OXIDATION; SILICA; SILICON; SUBSTRATES; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

FOWLER-NORDHEIM TUNNELING; HOT ELECTRON INJECTION; SURFACE CONDUCTIVITY;

SCANNING TUNNELING MICROSCOPY;

EID: 0032051084     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121241     Document Type: Article

References (19)

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