Scanning tunneling microscopy study on the surface and interface of Si(111)/SiO2 structures

Journal of Applied Physics

Volumn 83, Issue 7, 1998, Pages 3638-3642

  Fujita, Ken ^a,b   Watanabe, Heiji ^a,c   Ichikawa, Masakazu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b OKI ELECTRIC INDUSTRY CO   (Japan)

^c NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; FOURIER TRANSFORMS; INTERFACES (MATERIALS); SECOND HARMONIC GENERATION; SUBSTRATES; SURFACE ROUGHNESS; SURFACES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE THICKNESS; PERIODIC STRUCTURE;

SCANNING TUNNELING MICROSCOPY;

EID: 0032049730     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366579     Document Type: Article

References (25)

1. J. L. Dawson, K. Krisch, K. W. Evans-Lutterodt, M.-T. Tang, L. Manchanda, M. L. Green, D. Brasen, G. S. Higashi, and T. Boone, J. Appl. Phys. 77, 4746 (1995).
2. S. T. Cundiff, W. H. Knox, F. H. Braumann, K. W. Evans-Lutterodt, M.-T. Tang, M. L. Green, and H. M. van Driel, Appl. Phys. Lett. 70, 1414 (1997).
3. S. Iwata and A. Ishizaka, J. Appl. Phys. 79, 6653 (1996).
4. M. T. Sieger, D. A. Lut, T. Miller, and T. C. Chiang, Phys. Rev. Lett. 77, 2758 (1996).
5. T. Hattori, H. Nohira, Y. Tamura, and H. Ogawa, Jpn. J. Appl. Phys., Part 1 31, L638 (1992).
6. F. M. Ross and J. M. Gibson, Phys. Rev. Lett. 68, 1782 (1992).
7. H. Watanabe, K. Fujita, and M. Ichikawa, Surf. Sci. Lett. 385, L952 (1997).
8. Ph. Avouris, I.-W. Lyo, and F. Bozso, J. Vac. Sci. Technol. B 9, 424 (1991).
9. U. Neuwald, H. E. Hessel, A. Feltz, U. Memmert, and R. J. Behm, Appl. Phys. Lett. 60, 1307 (1992).
10. M. Udagawa, M. Niwa, and I. Sumita, J. Appl. Phys. 72, 6017 (1992).
11. K. E. Johnson and T. Engel, Phys. Rev. Lett. 69, 339 (1992).
12. Y. Ono, M. Tabe, and H. Kageshima, Phys. Rev. B 48, 14291 (1993).
13. A. Feltz, U. Memmert, and R. J. Behm, Surf. Sci. 314, 34 (1994).
14. G. J. Pietsch, U. Köhler, O. Jusko, M. Henzler, and P. O. Hahn, Appl. Phys. Lett. 60, 1321 (1992).
15. M. Liehr, J. E. Lewis, and G. W. Rubloff, J. Vac. Sci. Technol. A 5, 1559 (1987).
16. Y. Kobayashi and K. Sugii, J. Vac. Sci. Technol. A 10, 2308 (1992).
17. H. Watanabe, K. Fujita, and M. Ichikawa, Appl. Phys. Lett. 70, 1095 (1997).
18. Y. Homma, M. Suzuki, and N. Yabumoto, J. Vac. Sci. Technol. A 10, 2055 (1992).
19. J. C. Lee, I. C. Chen, and C. Hu, IEEE Trans. Electron Devices 35, 2268 (1988).
20. K. Takayanagi, Y. Tanishiro, S. Takahashi, and M. Takahashi, Surf. Sci. 164, 367 (1985);
21. J. Vac. Sci. Technol. A 3, 1502 (1985).
22. S. Y. Tong, H. Huang, C. M. Wei, W. E. Packard, F. K. Men, G. Glander, and M. B. Webb, J. Vac. Sci. Technol. A 6, 615 (1988).
23. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), pp. 22-35.
24. J. L. Alay, M. Fukuda, C. H. Bjorkman, K. Nakagawa, S. Yokoyama, S. Sasaki, and M. Hirose, Jpn. J. Appl. Phys., Part 1 34, L653 (1995).
25. See page 395 in Ref. 22.