High-frequency noise of modern MOSFETs: Compact modeling and measurement issues

IEEE Transactions on Electron Devices

Volumn 53, Issue 9, 2006, Pages 2062-2080

  Deen, M Jamal ^a,b   Chen, Chih Hung ^a,b   Asgaran, Saman ^b   Rezvani, G Ali ^c   Tao, Jon ^c   Kiyota, Yukihiro ^a,d  

^a IEEE   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

^c RF Micro Devices Inc   (United States)

^d Semiconductor Business Unit   (Japan)

Author keywords

Compact noise modeling; HF noise; HF noise measurement; MOS Noise; Noise modeling; Noise parameters; RF CMOS noise; RF compact MOS noise models; RF MOS transistor noise; RF Noise; RF noise deembedding; RF noise measurement

Indexed keywords

COMPACT NOISE MODELING; HF NOISE MEASUREMENT; MOS NOISE; NOISE MODELING; NOISE PARAMETERS; RF CMOS NOISE; RF COMPACT MOS NOISE MODELS; RF MOS TRANSISTOR NOISE; RF NOISE; RF NOISE DEEMBEDDING;

CIRCUIT SIMULATION; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; SIGNAL NOISE MEASUREMENT; SPURIOUS SIGNAL NOISE;

MOSFET DEVICES;

EID: 33947111799     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.880370     Document Type: Article

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