Noise modeling methodologies in the presence of mobility degradation and their equivalence

IEEE Transactions on Electron Devices

Volumn 53, Issue 2, 2006, Pages 348-355

  Roy, Ananda S ^a   Enz, Christian C ^a,b   Sallese, Jean Michel ^a  

^a EPFL   (Switzerland)

^b CSEM   (Switzerland)

Author keywords

Induced gate noise; Mobility reduction; MOSFET compact modeling; Thermal noise

Indexed keywords

CALCULATIONS; CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC FIELDS; EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; THERMAL NOISE;

INDUCED GATE NOISE; MOBILITY DEGRADATION; MOBILITY REDUCTION; MOSFET COMPACT MODELING; NOISE MODELING;

MOSFET DEVICES;

EID: 31744435116     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.862703     Document Type: Article

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