Influence of a tunneling gate current on the noise performance of SOI MOSFETs

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2004, Pages 55-57

  Pailloncy, G ^a   Iniguez, B ^b   Dambrine, G ^a   Danneville, F ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b UNIVERSITAT ROVIRA I VIRGILI   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MICROWAVES; NATURAL FREQUENCIES; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE;

NOISE FIGURE; NOISE MODELING; SHOT CURRENT NOISE; TUNNELING GATE CURRENT (TGC);

MOSFET DEVICES;

EID: 16244410098     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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