Induced gate noise in MOSFETs revisited: The submicron case

Solid-State Electronics

Volumn 41, Issue 12, 1997, Pages 1937-1942

  Triantis, D P ^a   Birbas, A N ^a   Plevridis, S E ^a  

^a UNIVERSITY OF PATRAS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; SHORT CIRCUIT CURRENTS; THERMAL NOISE;

CAPACITIVE COUPLING;

MOSFET DEVICES;

EID: 0031342921     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00178-0     Document Type: Article

References (8)

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3. Statz, H., Haus, H. and Pucel, A., IEEE Trans. Electron. Dev., 1974, 21, 549.
4. Toh, K., Ko, P. and Meyer, R. G., IEEE J. Solid-State Circuits, 1988, 23, 950.
5. Takeuchi, K. and Fukuma, M., IEEE Trans. Electron Devices, 1994, 41, 1623.
6. Nougier, J.-P., IEEE Trans. Electron Devices., 1994, 41, 2034.
7. Klimovitch, G., Lee, T. and Yamamoto, Y., to be published.
8. Gasquet, D., Ph.D. thesis, Universite de Montpellier II.