Fabrication and characterization of sub-quarter-micron MOSFET's with a copper gate electrode

IEEE Electron Device Letters

Volumn 20, Issue 5, 1999, Pages 254-255

  Ma, Y ^a   Evans, D R ^a   Nguyen, T ^a   Ono, Y ^a   Hsu, S T ^a  

^a SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRODES; FABRICATION; GATES (TRANSISTOR); SILICON WAFERS;

COPPER DEPOSITION; COPPER GATE ELECTRODES; METAL GATE; REPLACEMENT GATE PROCESS;

MOSFET DEVICES;

EID: 0032690269     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.761031     Document Type: Article

References (7)

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