A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETs

IEEE Transactions on Microwave Theory and Techniques

Volumn 53, Issue 9, 2005, Pages 2926-2933

  Cho, Ming Hsiang ^a,b,e   Huang, Guo Wei ^a,b   Wu, Lin Kun ^c   Chiu, Chia Sung ^a,b   Wang, Yueh Hua ^a,c,f   Chen, Kun Ming ^a,b   Tseng, Hua Chou ^d,g,h   Hsu, Tsun Lai ^d  

^a IEEE   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^e Phi Tau Phi ^*  (Taiwan)

^f RF Micro Devices   (Taiwan)

^g UMC

^h International SiGe Technology and Device Meeting (ISTDM)

Author keywords

De embedding; MOSFET; Parasitics; Scattering parameters

Indexed keywords

DE-EMBEDDING; PARASITICS; SHIELD BASED TEST STRUCTURE; SOURCE TERMINAL;

COMPUTER SIMULATION; EQUIVALENT CIRCUITS; SCATTERING PARAMETERS; TERMINALS (ELECTRIC);

MOSFET DEVICES;

EID: 27744441335     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2005.854245     Document Type: Conference Paper

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