Electrical properties of Al2O3-HfTiO laminate gate dielectric stacks with an equivalent oxide thickness below 0.8 nm

Thin Solid Films

Volumn 515, Issue 7-8, 2007, Pages 3704-3708

  Mikhelashvili, V ^a   Eisenstein, G ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Electrical characterization; Electron beam gun deposition; Leakage current; Thin dielectric films

Indexed keywords

ALUMINA; CURRENT DENSITY; ELECTRIC PROPERTIES; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY;

DIELECTRIC STACKS; ELECTRON BEAM GUN DEPOSITION; THIN DIELECTRIC FILMS;

DIELECTRIC MATERIALS;

EID: 33846924602     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.09.008     Document Type: Article

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