Electrical characteristics of metal-dielectric-metal and metal-dielectric-semiconductor structures based on electron beam evaporated Y2O3, Ta2O5 and Al2O3 thin film

Journal of Applied Physics

Volumn 84, Issue 12, 1998, Pages 6747-6752

  Mikhaelashvili, V ^a   Betzer, Y ^a   Prudnikov, I ^a   Orenstein, M ^a   Ritter, D ^a   Eisenstein, G ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CAPACITORS; CURRENT DENSITY; DIELECTRIC FILMS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON BEAMS; PERMITTIVITY; SEMICONDUCTOR MATERIALS; TANTALUM COMPOUNDS; THIN FILMS; YTTRIUM COMPOUNDS;

BARRIER HEIGHTS; ELECTRON BEAM EVAPORATION; FLATBAND VOLTAGES; IONIZATION ENERGY; LEAKAGE CURRENT DENSITY; LOSS FACTOR; METAL DIELECTRIC METAL CAPACITORS; METAL DIELECTRIC SEMICONDUCTOR STRUCTURE; SCHOTTKY EMISSION; SURFACE STATES DENSITY;

ELECTRIC PROPERTIES;

EID: 0032534442     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369002     Document Type: Article

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