Atomistic simulation of the isotope effect on defect formation in H/D-implanted Si

Proceedings - Electrochemical Society

Volumn PV 2005-03, Issue , 2005, Pages 179-184

  Zahel, T ^a   Otto, G ^a   Hobler, G ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEFECTS; DIFFUSION; ISOTOPES; MONTE CARLO METHODS; RAMAN SPECTROSCOPY;

ATOMISTIC SIMULATION; VACANCY TYPE DEFECTS;

SILICON;

EID: 31844442757     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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