Narrow fluence window and giant isotope effect in low-energy hydrogen ion blistering of silicon

Applied Physics Letters

Volumn 84, Issue 17, 2004, Pages 3286-3288

  Moutanabbir, O ^a   Giguere A ^a   Terreault, B ^a  

^a INRS EMT   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DESORPTION; HYDROGEN; ION IMPLANTATION; ISOTOPES; MASS SPECTROMETERS; MICROELECTRONICS; STATISTICAL METHODS; SURFACE TOPOGRAPHY; THICKNESS MEASUREMENT;

ION BLISTERING; LOW ENERGY BLISTERING; SURFACE TEXTURING; THERMAL DESORPTION SPECTRA (TDS);

SILICON;

EID: 2542458518     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1723699     Document Type: Article

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