Ion blistering of boron-doped silicon: The critical role of defect passivation

Applied Physics Letters

Volumn 87, Issue 23, 2005, Pages 1-3

  Desrosiers, N ^a   Gigure A ^a   Moutanabbir, O ^a,b   Terreault, B ^a  

^a INRS EMT   (Canada)

^b KEIO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); IONS; MICROSCOPES; RAMAN SCATTERING; SILICON; SPECTROSCOPY; SURFACES;

INTERNAL SURFACES; ION DOSE; THERMAL DESORPTION;

BORON;

EID: 28444445214     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2139845     Document Type: Article

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