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Volumn 34, Issue 4, 2001, Pages 477-482

Comparison between the different implantation orders in H+ and He+ coimplantation

(12) Duo, Xinzhong a Liu, Weili a Zhang, Miao a Wang, Lianwei a Lin, Chenglu a Okuyama, M b Noda, M b Cheung, Wing Yiu c Chu, Paul K d Hu, Peigang e Wang, S X f Wang, L M f

a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

b OSAKA UNIVERSITY (Japan)

c CHINESE UNIVERSITY OF HONG KONG (Hong Kong)

d CITY UNIVERSITY OF HONG KONG (Hong Kong)

e FUDAN UNIVERSITY (China)

f NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELASTICITY; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; HELIUM; HYDROGEN; POSITRON ANNIHILATION SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SINGLE CRYSTALS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ELASTIC RECOIL DETECTION; IMPLANTATION ORDERS; POSITRON TRAPS; RUTHERFORD BACKSCATTERING SPECTROMETRY;

ION IMPLANTATION;

EID: 0035249983 PISSN: 00223727 EISSN: None Source Type: Journal
DOI: 10.1088/0022-3727/34/4/306 Document Type: Article

Times cited : (17)

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