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Volumn PV 2005-03, Issue , 2005, Pages 155-166

Isotope effects in low-energy ion-induced splitting

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; ISOTOPES; MONTE CARLO METHODS; POSITRON ANNIHILATION SPECTROSCOPY; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 31944450054     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (37)
  • 5
    • 31944451701 scopus 로고
    • FR Patent 2,681,472 (1993); US Patent 5,374,564
    • M. Bruel, FR Patent 2,681,472 (1993); US Patent 5,374,564 (1994).
    • (1994)
    • Bruel, M.1
  • 16
    • 31944435462 scopus 로고    scopus 로고
    • private communication
    • U. Gösele (private communication).
    • Gösele, U.1
  • 26
    • 18644375817 scopus 로고    scopus 로고
    • New effects in synergistic blistering of silicon by co-implantation of H, D and He ions
    • to appear
    • O. Moutanabbir and B. Terreault, New effects in synergistic blistering of silicon by co-implantation of H, D and He ions, to appear in Appl. Phys. Lett.
    • Appl. Phys. Lett.
    • Moutanabbir, O.1    Terreault, B.2
  • 27
    • 31944432842 scopus 로고    scopus 로고
    • Blistering effects of low energy hydrogen and helium ions implanted in GaAs (100) crystals
    • th IBMM Int. Conf., Monterey, CA, Sept. 5-10, 2004, submitted to
    • th IBMM Int. Conf., Monterey, CA, Sept. 5-10, 2004, submitted to Nucl. Instr. & Meth. B.
    • Nucl. Instr. & Meth. B.
    • Giguère, A.1    Desrosiers, N.2    Terreault, B.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.