Onset of blistering in hydrogen-implanted silicon

Applied Physics Letters

Volumn 74, Issue 7, 1999, Pages 982-984

  Huang, L J ^a   Tong, Q Y ^a,c   Chao, Y L ^a   Lee, T H ^a   Martini, T ^b   Gosele U ^b  

^a Duke University   (United States)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c RTI INTERNATIONAL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001161041     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123430     Document Type: Article

References (11)

1. M. Bruel, Electron. Lett. 31, 1201 (1995).
2. T.-H. Lee, Q.-Y. Tong, Y.-L. Chao, L.-J. Huang, and U. Gösele. Electrochem. Soc. Proc. 97-23, 27 (1997).
3. L. Di Cioccio, F. Letertre, Y. L. Tiec, A. M. Papon, C. Jaussaud, and M. Bruel, Mater. Sci. Eng., B 46, 349 (1997).
4. Q.-Y. Tong, T.-H. Lee, L.-J. Huang, Y.-L. Chao, and U. Gösele, Electron. Lett. 34, 407 (1998).
5. E. Jalaguier, B. Aspar, S. Pocas, J. F. Mithaud, M. Zussy, A. M. Papon. and M. Bruel, Electron. Lett. 34, 408 (1998).
6. Q. Y. Tong, K. Gutjahr, S. Hopfe, U. Gösele, and T.-H. Lee, Appl. Phys. Lett. 70, 1390 (1997).
7. L-J. Huang, Q.-Y. Tong, T.-H. Lee, Y.-L. Chao, and u. Gösele, Electrochem. Soc. Proc. 98-1, 1373 (1998).
8. M. Bruel, B. Aspar, C. Maleville, H. Moriceau, A. J. Auberton-Hervé, and T. Barge, Electrochem. Soc. Proc. 97-23, 3 (1997).
9. M. Bruel, Nucl. Instrum. Methods Phys. Res. B 108, 313 (1996).
10. K. Mitani and U. Gösele, Appl. Phys. A 54, 543 (1992).
11. M. K. Weldon, V. Marsico, Y. J. Chabal, A. Agarwal, D. J. Eaglesham, J. B. Sapjeta, W. L. Brown, D. C. Jacobson, Y. Caudano, S. B. Christman, and E. E. Chaban, J. Vac. Sci. Technol. B 15, 1065 (1997).