Dielectric breakdown of thin oxides during ramped current-temperature stress

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2305-2310

  Fleetwood, Daniel M ^a,b,c   Riewe, Leonard C ^b   Winokur, Peter S ^a,b   Sexton, Frederick W ^a,b  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS-TEMPERATURE RAMP TECHNIQUE; DIELECTRIC BREAKDOWN; GATE OXIDES; RAMPED CURRENT-TEMPERATURE STRESS; THIN OXIDES;

DIELECTRIC PROPERTIES; DOSIMETRY; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; HEAVY IONS; LEAKAGE CURRENTS; MOS DEVICES; OXIDES; STRESSES; TEMPERATURE; THERMAL EFFECTS;

RADIATION EFFECTS;

EID: 0034451490     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903769     Document Type: Conference Paper

References (31)

1. Ionizing radiation induced leakage current in ultra-thin gate oxides
2. Radiation and stress induced leakage currents in ultra-thin gate oxides
3. Fowler-Nordheim characteristics of electron irradiated MOS capacitors
4. A model of RILC in ultra-thin gate oxides
5. Electrically and radiation induced leakage currents in thin oxides
6. 2 films
7. 2 reliability
8. 2 films
9. Hydrogen electrochemistry and stress-induced leakage current in silica
10. Degradation and breakdown in thin oxide layers: Mechanisms, models, and reliability prediction
11. An electrical technique to measure the radiation susceptibility of MOS gate insulators
12. 2O, and nitrided oxides
13. Effects of bias on thermally stimulated current (TSC) in MOS devices
14. 2 defect density and energy in irradiated MOS capacitors
15. 2
16. 2 films on Si
17. Single event gate rupture in thin gate oxides
18. Precursor ion damage and angular dependence of single event gate rupture in thin oxides
19. Determining the energy distribution of traps in insulating thin films using the thermally stimulated current technique
20. Effects of isochronal annealing and irradiation temperature on radiation-induced trapped charge
21. Hole removal in thin gate MOSFET's by tunneling
22. Generation of interface states by ionizing radiation in very thin MOS oxides
23. 2
24. 2 dielectrics
25. Breakdown properties of thin oxides in irradiated MOS capacitors
26. Breakdown properties of irradiated capacitors
27. 2
28. 2 films
29. Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films
30. The relationship between Co-60 and 10-keV X-ray damage in MOS devices