Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric

Applied Physics Letters

Volumn 86, Issue 9, 2005, Pages 1-3

  Shen, C ^a   Li, M F ^a   Yu, H Y ^a   Wang, X P ^a   Yeo, Y C ^a   Chan, D S H ^a   Kwong, D L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CBARGE TRAPPING; ELECTRON-LATTICE INTERACTION; GATE VOLTAGE; STATIC STRESS;

DIELECTRIC DEVICES; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MATHEMATICAL MODELS; MOS DEVICES; OXYGEN; PASSIVATION; SILICA; STRESSES;

ELECTRON TRAPS;

EID: 21044436652     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1874312     Document Type: Article

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17. 2 interfacial layer. When a positive gate voltage is applied in the stress phase, the one-electron trap energy in the high-k dielectric moves into energy gap region of the Si substrate, and tunneling becomes forbidden.
18. 2/dt, where 0<η<1 represents the recapture probability. As the detrapping of the first electron is very fast, the right-hand side of the equation is dominated by the first term. The value of η is not important, and therefore dropped η for simplicity.