First-principles modeling of double-gate UTSOI MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 597-600

  Evans, Matthew H ^a   Caussanel, Matthieu ^b   Schrimpf, Ronald D ^b   Pantelides, Sokrates T ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; INTERFACES (MATERIALS); QUANTUM THEORY; SURFACE ROUGHNESS; WAVE FUNCTIONS;

ATOMIC-SCALE STRUCTURES; EMPIRICAL PARAMETERS; FIRST PRINCIPLES MODELING;

MOSFET DEVICES;

EID: 33846367498     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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