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Applied Physics A: Materials Science and Processing

Volumn 78, Issue 4, 2004, Pages 453-459

Microscopic bonding and macroscopic strain relaxations at Si-SiO 2 interfaces

(2) Lucovsky, G a Phillips, J C b

a NORTH CAROLINA STATE UNIVERSITY (United States)

b RUTGERS UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; DIELECTRIC MATERIALS; GLASS; INTERFACES (MATERIALS); OXYGEN; PERMITTIVITY; REFRACTIVE INDEX; SECOND HARMONIC GENERATION; SILICON; THERMAL EXPANSION; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

EDGE BONDING; INTERFACIAL TRANSITIONS; STRAIN RELAXATIONS;

SILICA;

EID: 1242329919 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-003-2403-2 Document Type: Article

Times cited : (44)

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